IRF4905
₹191.00
P-Channel 55 V 42A (Tc) 170W (Tc) Surface Mount D2PAK
250 in stock (can be backordered)
Reviews (0)
Shipping & Delivery
MAECENAS IACULIS
Vestibulum curae torquent diam diam commodo parturient penatibus nunc dui adipiscing convallis bulum parturient suspendisse parturient a.Parturient in parturient scelerisque nibh lectus quam a natoque adipiscing a vestibulum hendrerit et pharetra fames nunc natoque dui.
ADIPISCING CONVALLIS BULUM
- Vestibulum penatibus nunc dui adipiscing convallis bulum parturient suspendisse.
- Abitur parturient praesent lectus quam a natoque adipiscing a vestibulum hendre.
- Diam parturient dictumst parturient scelerisque nibh lectus.
Scelerisque adipiscing bibendum sem vestibulum et in a a a purus lectus faucibus lobortis tincidunt purus lectus nisl class eros.Condimentum a et ullamcorper dictumst mus et tristique elementum nam inceptos hac parturient scelerisque vestibulum amet elit ut volutpat.
Related products
2N7000 FET – N-Channel Enhancement Mode FET TO-92 Package
2N7000 is N-channel enhancement mode field effect transistors, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low-voltage, low-cur-rent applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.
2SK1120 MOSFET – 1000V 8A N-Channel Power MOSFET TO-3PN Package
2SK1120 ?utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications
2SK2611 MOSFET – 900V 9A N-Channel Power MOSFET TO-3PN Package
K2611S N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
38N30 MOSFET – FQA38N30 300V 38.4A N-Channel Power MOSFET TO-3 Packag
38N30 N-Channel enhancement mode power field effect transistors. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
BS170 MOSFET – 60V 500mA N-Channel Small Signal MOSFET TO-92 Package
BS170 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
IRF1404 MOSFET – 40V 202A N-Channel HEXFET Power MOSFET TO-220 Package
IRF1404 Seventh Generation HEXFET? Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications including automotive.
IRF3710 MOSFET – 100V 57A N-Channel HEXFET Power MOSFET TO-220 Package
IRF3710 is Advanced HEXFET? Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Reviews
There are no reviews yet.