FEATURES:
– **Metal-Semiconductor Junction with Guard Ring:** Utilizes a metal-semiconductor junction with a guard ring structure to improve performance and reliability.
– **Epitaxial Construction:** Typically fabricated using epitaxial construction techniques for precise control and consistency in semiconductor properties.
– **Low Forward Voltage Drop:** Exhibits a lower forward voltage drop compared to standard PN junction diodes, making it efficient for low power loss applications.
– **High Current Capability:** Offers high current carrying capability, suitable for applications requiring robust current handling.
– **UL Recognition 94V-0:** The plastic encapsulation of the diode meets UL recognition 94V-0 standards, ensuring flame retardancy and safety.
– **Applications:** Ideal for use in low voltage, high frequency inverters, free-wheeling (flyback) diodes, and polarity protection circuits due to its fast switching characteristics and low reverse recovery time.
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