The MBR150/160 series employs the Schottky Barrier principle in a
large area metalātoāsilicon power diode. Stateāofātheāart geometry
features epitaxial construction with oxide passivation and metal
overlap contact.
Features
ā¢ Low Reverse Current
ā¢ Low Stored Charge, Majority Carrier Conduction
ā¢ Low Power Loss/High Efficiency
ā¢ Highly Stable Oxide Passivated Junction
ā¢ These are PbāFree Devices*
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