Features
ā¢ Extremely Low vF
ā¢ Low Power Loss/High Efficiency
ā¢ Highly Stable Oxide Passivated Junction
ā¢ Low Stored Charge, Majority Carrier Conduction
ā¢ PbāFree Packages are Available
These devices employ the Schottky Barrier principle in a large area
metalātoāsilicon power diode. Stateāofātheāart geometry features
epitaxial construction with oxide passivation and metal overlap
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