The IR2111 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for halfbridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Internal deadtime is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Features:-
Floating channel designed for bootstrap operation Fully operational to 600V Tolerant to negative transient voltage dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
CMOS Schmitt-triggered inputs with pull-down
Matched propagation delay for both channels
Internally set deadtime
High side output in phase with input
Also available LEAD-FREE
Specifications:-
Parameter Min Max Unit
VB-High side floating supply voltage -0.3 625 V
VS- High side floating supply offset voltage VB -25 VB 0.3 V
VHO- High side floating output voltage VS -0.3 VB 0.3 V
VCC- Low side and logic fixed supply voltage -0.3 25 V
VLO- Low side output voltage -0.3 VCC 0.3 V
VIN-Logic input voltage -0.3 VSS 0.3 V
Related Document:-
IR2111 IC Datasheet
* Product Images are shown for illustrative purposes only and may differ from actual product.
