CT60AM-18F IGBT – 900V 60A High Voltage Current IGBT
FGA25N120ANTD IGBT – 1200V 25A NPT Trench IGBT
FSBB20CH60 IGBT Module – 600V 20A Power Conversion IGBT Module
FSBB20CH60 is a Motion SPM??3 series that ON Semiconductor has developed to provide a very compact and high performance inverter solution for AC motor drives in low-power applications such as air conditioners. It combines optimized circuit protections and drives matched to low-loss IGBTs. The system reliability is further enhanced by the integrated under-voltage lock-out and over-current protection. The high speed built-in HVIC provides optocoupler- less single-supply IGBT gate driving capability that further reduces the overall size of the inverter system. Each phase leg current of the inverter can be monitored thanks to three separate negative dc terminals.
FSBB30CH60 IGBT Module – 600V 30A Power Conversion IGBT Module
The FSBB30CH60 is an advanced smart power module (SPMTM) has newly developed and designed to provide very compact and high performance ac motor drives mainly targeting lowpower inverter-driven application like air conditioner and washing machine. It combines optimized circuit protection and drive matched to low-loss IGBTs. System reliability is further enhanced by the integrated under-voltage lock-out and shortcircuit protection. The high speed built-in HVIC provides optocoupler-less single-supply IGBT gate driving capability that further reduce the overall size of the inverter system design. Each phase current of inverter can be monitored separately due to the divided negative dc terminals.
G15N60 – Fast IGBT
G160N60 IGBT – 600V 50A Ultra-Fast IGBT
The G160N60 of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
Applications:-
??AC & DC motor controls
??General purpose inverters
??Robotics, servo controls
??Power supplies
G60N100BNTD IGBT – 1000V 60A N-Channel IGBT
GT50JR22
(1) 6.5th generation
(2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip.
(3) Enhancement mode
(4) High-speed switching
IGBT : tf
= 0.05 ?s (typ.) (IC = 50 A)
FWD : trr = 0.35 ?s (typ.) (IF = 15 A)
(5) Low saturation voltage : VCE(sat) = 1.55 V (typ.) (IC = 50 A)
(6) High junction temperature : Tj
= 175? (max)
HGTG11N120CND IGBT – 1200V 43A N-Channel IGBT
The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
IGP15N60T IGBT – 600V 15A Low Loss IGBT
The?IGP15N60T is a low loss IGBT : IGBT in TRENCH STOP? and Field stop technology.?It is designed for frequency converters and Uninterrupted Power Supply.
The?TRENCH STOP? and Field stop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
