2N7000 FET – N-Channel Enhancement Mode FET TO-92 Package
2N7000 is N-channel enhancement mode field effect transistors, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low-voltage, low-cur-rent applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.
2SK1118 MOSFET – 600V 6A N-Channel Power MOSFET TO-220F Package
2SK1118 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
2SK1120 MOSFET – 1000V 8A N-Channel Power MOSFET TO-3PN Package
2SK1120 ?utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications
2SK1317 MOSFET – 1500V 2.5A N-Channel Power MOSFET TO-3P Package
2SK1317 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications
2SK2225 MOSFET – 1500V 2A N-Channel Power MOSFET TO-3PFM Package
2SK2225 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications
2SK2611 MOSFET – 900V 9A N-Channel Power MOSFET TO-3PN Package
K2611S N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
2SK2698 MOSFET – 500V 15A N-Channel Power MOSFET TO-3PN Package
2SK2698 N-Channel enhancement mode power field effect transistors are produced using Toshiba proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
2SK2717 MOSFET – 900V 5A N-Channel Power MOSFET TO-220F Package
2SK2717 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
2SK2962
Chopper Regulator, DC?DC Converter and Motor Drive
Applications
z 4-V gate drive
z Low drain?source ON resistance : RDS (ON) = 0.5 ? (typ.)
z High forward transfer admittance : |Yfs| = 1.2 S (typ.)
z Low leakage current : IDSS = 100 ?A (max) (VDS = 100 V)
z Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
2SK2968 MOSFET – 900V 10A N-Channel Power MOSFET TO-3PN Package
2SK2968 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
2SK3550 MOSFET – 900V 10A N-Channel Power MOSFET TO-3PF Packag
2SK3550?is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
2SK3569 MOSFET – 600V 10A N-Channel Power MOSFET TO-220F Package
2SK3569 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
