Showing 121–132 of 225 results

IRF9540N

185.00
P-Channel 100 V 23A (Tc) 3.1W (Ta), 110W (Tc) Through Hole TO-262

IRF9540N

105.00
MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC

IRF9540N MOSFET – 100V 23A P-Channel Power MOSFET TO-220 PackageIRF9540N MOSFET – 100V 23A P-Channel Power MOSFET TO-220 Package

32.00
IRF9540N is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

IRF9610

133.00
MOSFET 200V P-CH HEXFET MOSFET

IRF9610 MOSFET – 200V 1.8A P-Channel Hexfet Power M

45.00
IRF9610 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

IRF9620

113.00
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry

IRF9630

110.00
? Dynamic dV/dt rating ? Repetitive avalanche rated ? P-channel ? Fast switching ? Ease of paralleling ? Simple drive requirements

IRF9630 MOSFET- 200V 6.5A P-Channel Power MOSFET TO-220 Package

31.50
IRF9630 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

IRF9634 MOSFET – 250V – 3.4A P-Channel Power MOSFET

56.00
Features
  • Advance process technology
  • Dynamic dv/dt rating
  • 150? operating temperature
  • Fast switching
  • P-channel
  • Fully avalanche rated

IRF9640

145.00
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ? Dynamic dV/dt rating ? Repetitive avalanche rated ? P-channel ? Fast switching ? Ease of paralleling ? Simple drive requirements

IRF9640 MOSFET – 200V 11A P-Channel Power MOSFET TO-220 Package

68.00
IRF9640 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

IRF9Z24 MOSFET – 60V 11A P-Channel Power MOSFET TO-220 Package

45.00
IRF9Z24 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.