Showing 181–192 of 225 results

IRFP450

290.00
? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Isolated Central Mounting Hole ? Fast Switching ? Ease of Paralleling ? Simple Drive Requirements ? Lead (Pb)-free Available Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

IRFP450 MOSFET – 500V 14A N-Channel Power MOSFET TO-247 Package

95.00
IRFP450 N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

IRFP4568 MOSFET – 150V 171A N-Channel Power MOSFET TO-247 Package

280.00
IRFP4568 Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175?C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications

IRFP460 MOSFET

80.00
IRFP460 MOSFET - Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. Mfr. No: IRFP460PBF Mfr.:Vishay Semiconductors Description: MOSFET 500V N-CH HEXFET Datasheet: IRFP460PBF Datasheet (PDF)

IRFP4668PBF MOSFET

350.00

IRFP4668 MOSFET N-CH 200V 130A TO-247AC

The IRFP4668PBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET featured with improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits. Manufacturer's Part: IRFP4668PBF Manufacturer: Infineon Technologies Description: IRFP4668 MOSFET N-CH 200V 130A TO-247AC IRFP4668 MOSFET Datasheet

IRFP9140N

179.00
Advance process technology Dynamic dv/dt rating 175 degree operating temperature p-channel fast switching fully avalanche rated pb-free  

IRFP9240 MOSFET – 200V 12A P-Channel Power MOSFET TO-247 Package

168.00
IRFP9240 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

IRFPE40

293.00
? Dynamic dV/dt rating ? Repetitive avalanche rated ? Isolated central mounting hole ? Fast switching ? Ease of paralleling ? Simple drive requirements

IRFPE50

347.00
? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Isolated Central Mounting Hole ? Fast Switching ? Ease of Paralleling ? Simple Drive Requirements ? Compliant to RoHS Directive 2002/95/EC Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

IRFPF30

382.00
? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Isolated Central Mounting Hole ? Fast Switching ? Ease of Paralleling ? Simple Drive Requirements ? Compliant to RoHS Directive 2002/95/EC Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

IRFPF50

446.00
? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Isolated Central Mounting Hole ? Fast Switching ? Ease of Paralleling ? Simple Drive Requirements ? Compliant to RoHS Directive 2002/95/EC Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

IRFPG30

255.00
? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Isolated Central Mounting Hole ? Fast Switching ? Ease of Paralleling ? Simple Drive Requirements ? Compliant to RoHS Directive 2002/95/EC Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.