IRFZ48N MOSFET – 55V 64A N-Channel Power MOSFET TO-220 Package
IRFZ48N utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRLB8748 MOSFET – 30V Single N-Channel HEXFET Power MOSFET
Optimized for UPS/Inverter Applications, High-Frequency Synchronous Buck Converters for Computer Processor Power, Very Low RDS(on) at 4.5V VGS, Ultra-Low Gate Impedance, Fully Characterized Avalanche Voltage and Current. The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capability. The devices are ideal for low-frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
IRLD110
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? For Automatic Insertion
? End Stackable
? Logic-Level Gate Drive
? RDS(on) Specified at VGS = 4 V and 5 V
? 175 ?C Operating Temperature
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up
to 1 W.
P30NF10 (STP30NF10) MOSFET – 100V 35A N-Channel Power MOSFET TO-220 Package
P30NF10 is apower MOSFET is the latest development of STMicroelectronis unique "Single Feature Size?" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
P405W
? Glass passivated junctions for greater reliability
? Electrically isolated base plate
? Available up to 1200 VRRM/VDRM
? High dynamic characteristics
? Wide choice of circuit configurations
? Simplified mechanical design and assembly
? UL E78996 approved
The VS-P400 series of integrated power circuits consists of
power thyristors and power diodes configured in a single
package. With its isolating base plate, mechanical designs
are greatly simplified giving advantages of cost reduction
and reduced size.
Applications include power supplies, control circuits and
battery chargers.
P80NF55 (STP80NF55) MOSFET – 55V 80A N-Channel Power MOSFET TO-220 Package
P80NF55 power MOSFETs have been developed using STMicroelectronics? unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications, and applications with low gate charge driving requirements.
P90NF03L (STP90NF03L) MOSFET – 30V 90A N-Channel Power MOSFET TO-220 Package
P90NF03L application specific Power Mosfet is the third generation of STMicroelectronics unique ?Single Feature Size?? strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.
SPW20N60S5
SPW47N60C3
STD4NK60ZT4 600 Volt 4 Amp Zener SuperMESH
