2SK3878 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Chopper Regulator, DC?DC Converter and Motor Drive Applications z 4-V gate drive z Low drain?source ON resistance : RDS (ON) = 0.5 ? (typ.) z High forward transfer admittance : |Yfs| = 1.2 S (typ.) z Low leakage current : IDSS = 100 ?A (max) (VDS = 100 V) z Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)

Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast Recovery Body Diode ? 100% Avalanche Tested ? Lower Leakage ? Popular TO-247 Package ? Faster Switching

BS107 N-Channel Mosfet is a type of field-effect transistor (FET) It has an insulated gate whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor or MISFET is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect-transistor. Used for Power Supplies, Switching applications.