IRF3205 MOSFET – 55V 110A N-Channel HEXFET Power MOSFET TO-220 Package
IRF3205 is Advanced HEXFET? Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF3415 MOSFET – 150V 43A N-Channel HEXFET Power MOSFET TO-220 Package
IRF3415 is fifth generation HEXFET? Power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF3710 MOSFET – 100V 57A N-Channel HEXFET Power MOSFET TO-220 Package
IRF3710 is Advanced HEXFET? Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF3710PBF
IRF3710PBF? Power MOSFET
IRF3710PBF is a 100V single N-channel Advanced HEXFET? Power MOSFET that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast-switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. Mfr. No: IRF3710PBF Mfr.: Infineon / IR Description: MOSFET MOSFT 100V 57A 23mOhm 86.7nC Datasheet: IRF3710PBF Datasheet (PDF) IRF3710PBF Datasheet
IRF4905 MOSFET – 55V 74A P-Channel HEXFET Power MOSFET TO-220 Package
IRF4905 is fifth generation HEXFET? Power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF510 MOSFET – 100V 5.6A N-Channel Power MOSFET TO-220 Package
IRF510 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
