Showing 97–108 of 225 results

IRF630 MOSFET – 200V 9A N-Channel Power MOSFET TO-220 Package

28.00
IRF630 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

IRF634

125.00
N-Channel 250 V 8.1A (Tc) 74W (Tc) Through Hole TO-220AB

IRF640 MOSFET – 200V 18A N-Channel Power MOSFET TO-220 Package

44.00
IRF640 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 150 W.

IRF640N

30.00
N-Channel 200 V 18A (Tc) 150W (Tc) Through Hole TO-262

IRF644

30.00
N-Channel 250 V 14A (Tc) 125W (Tc) Through Hole TO-220AB

IRF644 MOSFET – 250V 14A N-Channel Power MOSFET TO-220 Package

76.00
IRF644 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 125 W.

IRF710

30.00
N-Channel 400 V 2A (Tc) 36W (Tc) Through Hole TO-220AB

IRF720

45.00
N-Channel 400 V 3.3A (Tc) 50W (Tc) Through Hole TO-220AB

IRF720 MOSFET – 400V 3.3A N-Channel Power MOSFET TO-220 Package

24.00
IRF720 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

IRF730

45.00
N-Channel 400 V 5.5A (Tc) 74W (Tc) Through Hole TO-220AB

IRF730 MOSFET – 400V 5.5A N-Channel Power MOSFET TO-220 Package

23.50
IRF730 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 74 W.

IRF740

116.00
N-Channel 400 V 10A (Tc) 147W (Tc) Through Hole TO-220AB