Showing 1633–1644 of 1714 results

TNY266G

139.00
TinySwitch?-II integrates a 700 V power MOSFET, oscillator, high voltage switched current source, current limit and thermal shutdown circuitry onto a monolithic device. The start-up and operating power are derived directly from the voltage on the DRAIN pin, eliminating the need for a bias winding and associated circuitry. In addition, the TinySwitch-II devices incorporate auto-restart, line undervoltage sense, and frequency jittering. An innovative design minimizes audio frequency components in the simple ON/OFF control scheme to practically eliminate audible noise with standard taped/varnished transformer construction. PI-2684-061815 Wide-Range High-Voltage DC Input D S EN/UV BP - - DC Output TinySwitch-II Optional UV Resistor The fully integrated auto-restart circuit safely limits output power during fault conditions such as output short circuit or open loop, reducing component count and secondary feedback circuitry cost. An optional line sense resistor externally programs a line undervoltage threshold, which eliminates power down glitches caused by the slow discharge of input storage capacitors present in applications such as standby supplies. The operating frequency of 132 kHz is jittered to significantly reduce both the quasi-peak and average EMI, minimizing filtering cost.

TNY267PN

98.00
TinySwitch?-II integrates a 700 V power MOSFET, oscillator, high voltage switched current source, current limit and thermal shutdown circuitry onto a monolithic device. The start-up and operating power are derived directly from the voltage on the DRAIN pin, eliminating the need for a bias winding and associated circuitry. In addition, the TinySwitch-II devices incorporate auto-restart, line undervoltage sense, and frequency jittering. An innovative design minimizes audio frequency components in the simple ON/OFF control scheme to practically eliminate audible noise with standard taped/varnished transformer construction.

TPC8089-H

200.00
This N-Channel MOSFET employs cutting-edge trench technology to achieve high RDS(on) while maintaining a low gate charge. It can be applied to a wide range of situations.
Features?
1)VDS=40V,ID=6.7A,RDS(ON)<32m?@VGS=10V
2)Low gate charge.
3)Green device available.
4)Advanced high cell denity trench technology for ultra R
DS(ON).
5)Excellent package for good heat dissipation

TYN616 – 600V – 16A SCR – Thyristor

40.00
The standard TYN61616 A SCRs series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

U403

1,058.00
The -50V InterFET IFNU401, IFNU402, and IFNU403 JFET?s are targeted for low noise differential amplifier designs. Gate leakages are less than 10pA at room temperatures. The TO-71 package is hermetically sealed and suitable for military applications. Custom specifications, matching, and packaging options are available.