BD137 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

Summary The BD234 is a medium power linear and switching application-specific silicon single crystalline PNP power transistor housed in a Jedec SOT-32 plastic container. Collector-Base Voltage of the VCBO (IE = 0) (RBE = 1K) -45V VCER Collector-Emitter Voltage IB = 0; -45V VCEO Collector-Emitter Voltage Emitter-Base Voltage -45V VEBO (IC = 0) IC Collector Current: -5V and 2A Peak Current ICM Collector -6AP At Tc, the total dissipation is 25 ?C. 25W Operating Junction Temperature: 150 degrees Celsius Storage Temperature: -65 to 150 degrees Celsius Tj Max.

BD240C is a three layer PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.