Showing 121–132 of 169 results

BF256 N-Channel RF Transistor

45.00
The metal?oxide?semiconductor field-effect transistor is a type of transistor used for amplifying or switching electronic signals.

BF494 NPN Medium Frequency Transistor 20V 30mA TO-92 Package (Pack of 10)

50.00
BF494 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.

BFW10 Philips N-Channel Depletion JFET 30V 20mA TO-72 Package

110.00
BFW10 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.

BFW11 Philips N-Channel Depletion JFET 30V 10mA TO-72 Package

110.00
BFW11 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.

BSC016N06NS 60V 100A DSON-8 OptiMOS

261.00
These N-channel MOSFETs are optimized for synchronous rectification, 100% avalanche tested, with superior thermal resistance and enlarged source interconnection for

BSC020N03MSG 30V 100A TDSON-8 OptiMOS 3M

185.00
These N-channel MOSFETs are optimized for 5V driver applications (Notebook, VGA, POL), with low FOMSW for high-frequency SMPS and very

BSC026N08NS5

291.00
Optimized for synchronous rectification in server and desktop applications, these N-channel MOSFETs are 100% avalanche tested with superior thermal resistance.

BSC030N08NS5 MOSFET N-Ch 80V 100A

Original price was: ₹203.00.Current price is: ₹194.00.
This MOSFET is engineered for high-performance switch-mode power supplies (SMPS), boasting optimized synchronization rectification and superior thermal resistance. It has

BSC030P03NS3G 30V 25.4A TDSON-8

285.00
“Optimized for 5V driver applications (Notebook, VGA, POL) with low FOMSW for high-frequency SMPS. Features include 100% avalanche testing, N-channel

BSC042N03MSG 30V 93A TDSON-8 OptiMOS 3M

108.00
“Designed for 5V driver applications in notebooks, VGA, and POL with low FOMSW for high-frequency SMPS. Features include 100% avalanche

BSC050N03LSG

102.00
“High-speed N-channel MOSFET designed for SMPS and DC/DC converters, optimized for fast switching. Features include excellent gate charge x R_DS(on)

BSC059N04LSG 40V 73A TDSON-8 OptiMOS 3

92.00
“Fast-switching N-channel MOSFET optimized for SMPS and DC/DC converters. Qualified to JEDEC standards with excellent FOM, very low R_DS(on), superior