2N6028 Programmable Unijunction Transistor (Pack of 10)
2N6052 PNP Power Darlington Transistor
2N6107 PNP Bipolar Power Transistor 70V 7A TO-220 Package (Pack of 10)
2N6107 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.
2N6109 PNP Bipolar Power Transistor 50V 7A TO-220 Package (Pack of 10)
2N6109 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.
2N6111 PNP Bipolar Power Transistor 30V 7A TO-220 Package (Pack of 10)
2N6111 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.
2N6292 NPN Bipolar Power Transistor 70V 7A TO-220 Package (Pack of 10)
2N6292 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.
2N7000 FET – N-Channel Enhancement Mode FET TO-92 Package (Pack of 10)
2N7000 is N-channel enhancement mode field effect transistors, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low-voltage, low-cur-rent applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.
2SA1266 PNP General Purpose Transistor 50V 150mA TO-92 Package (Pack of 10)
2SA1266 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.
2SA1943 PNP Power Amplifier Transistor
The 2SA1943 is a high-power PNP Power transistor manufactured by Toshiba. It has a collector continuous current of 15A and a Collector-Emitter voltage of 230V. The base current is about 1.5A and the Emitter base voltage is 5V.
Due to its high current gain and collector current, it is very commonly used in?High power audio circuits or AF amplifiers. Recommended for 150-W high-fidelity audio frequency amplifier output stage. The transistor is popularly used in push-pull audio circuits along with this NPN Equivalent?2SC5200 NPN Transistor.
2SC2690A (Pack of 10)
Summary of the Product
These items, which are general-purpose transistors, are intended for use in radio frequency and audio power amplifiers.
FEATURES
? Suitable for usage in output stage of TV vertical deflection circuit and driver stage of 50 to 100 W audio amplifiers.
? High voltage and high frequency (fT) VCEO = 120 V/2SC2690A; fT = 175 MHz; VCE = 5.0 V; IC = 0.2 A)
? Similar to the PNP transistors 2SA1220 and 2SA1220A.
Additional information related to the Product
160 V is the collector to base voltage.
160 V from the collector to the emitter
Voltage from Emitter to Base: 5.0 V
DC Collector Current: 1.2 A
2.5 A is the collector current (pulse).
DC Base Current: 0.3 A
Total Power Dissipation - 1.2 W (T A = 25?C)
20 W is the total power dissipation at 25 ?C.
150 ?C for the junction temperature
Temperature Range (T) for Storage: 55 to 150 ?C
2SC3320 NPN High Voltage Switching Transistor 400V 15A TO-3PN Package
2SC3320 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.
2SC5200 NPN
2SC5200?NPN Power Amplifier Transistor 230V?with 1.5V Base and 15V Collector Current is type of bipolar transistor consisting of a layer of P-doped semiconductor (base) between two N-doped layers. A small current entering the base is amplified to produce a large collector and emitter current.
They are used in Mobile Phones, Industrial controls, televisions and Flip-flops, and High-Frequency Application Such as Radio Frequency Audio circuits.
