“Designed for 5V driver applications in notebooks, VGA, and POL with low FOMSW for high-frequency SMPS. Features include 100% avalanche testing, N-channel design with very low R_DS(on) at V_GS=4.5V, and excellent gate charge x R_DS(on) product. Qualified to JEDEC standards, offers superior thermal resistance, Pb-free and RoHS compliant with halogen-free plating per IEC61249-2-21.”
Description
Reviews (0)
Be the first to review “BSC042N03MSG 30V 93A TDSON-8 OptiMOS 3M” Cancel reply
Shipping & Delivery
MAECENAS IACULIS
Vestibulum curae torquent diam diam commodo parturient penatibus nunc dui adipiscing convallis bulum parturient suspendisse parturient a.Parturient in parturient scelerisque nibh lectus quam a natoque adipiscing a vestibulum hendrerit et pharetra fames nunc natoque dui.
ADIPISCING CONVALLIS BULUM
- Vestibulum penatibus nunc dui adipiscing convallis bulum parturient suspendisse.
- Abitur parturient praesent lectus quam a natoque adipiscing a vestibulum hendre.
- Diam parturient dictumst parturient scelerisque nibh lectus.
Scelerisque adipiscing bibendum sem vestibulum et in a a a purus lectus faucibus lobortis tincidunt purus lectus nisl class eros.Condimentum a et ullamcorper dictumst mus et tristique elementum nam inceptos hac parturient scelerisqueĀ vestibulum amet elit ut volutpat.
Related products
2SK1317 MOSFET – 1500V 2.5A N-Channel Power MOSFET TO-3P Package
₹410.00
2SK1317 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications
2SK2698 MOSFET – 500V 15A N-Channel Power MOSFET TO-3PN Package
₹120.00
2SK2698 N-Channel enhancement mode power field effect transistors are produced using Toshiba proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
38N30 MOSFET – FQA38N30 300V 38.4A N-Channel Power MOSFET TO-3 Packag
₹115.00
38N30 N-Channel enhancement mode power field effect transistors. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
IRF1010 MOSFET – 60V 84A N-Channel HEXFET Power MOSFET TO-220 Package
₹50.00
IRF1010 Advanced HEXFET? Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF1404 MOSFET – 40V 202A N-Channel HEXFET Power MOSFET TO-220 Package
₹85.00
IRF1404 Seventh Generation HEXFET? Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications including automotive.
IRF1407 MOSFET – 75V 130A N-Channel HEXFET Power MOSFET TO-220 Package
₹90.00
IRF1407 is Specifically designed for Automotive applications, this Stripe Planar design of HEXFET? Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175?C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
IRF3415 MOSFET – 150V 43A N-Channel HEXFET Power MOSFET TO-220 Package
₹78.00
IRF3415 is fifth generation HEXFET? Power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF3710 MOSFET – 100V 57A N-Channel HEXFET Power MOSFET TO-220 Package
₹50.00
IRF3710 is Advanced HEXFET? Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Reviews
There are no reviews yet.