“Designed for 5V driver applications in notebooks, VGA, and POL with low FOMSW for high-frequency SMPS. Features include 100% avalanche testing, N-channel design with very low R_DS(on) at V_GS=4.5V, and excellent gate charge x R_DS(on) product. Qualified to JEDEC standards, offers superior thermal resistance, Pb-free and RoHS compliant with halogen-free plating per IEC61249-2-21.”
Description
Reviews (0)
Be the first to review “BSC042N03MSG 30V 93A TDSON-8 OptiMOS 3M” Cancel reply
Shipping & Delivery
MAECENAS IACULIS
Vestibulum curae torquent diam diam commodo parturient penatibus nunc dui adipiscing convallis bulum parturient suspendisse parturient a.Parturient in parturient scelerisque nibh lectus quam a natoque adipiscing a vestibulum hendrerit et pharetra fames nunc natoque dui.
ADIPISCING CONVALLIS BULUM
- Vestibulum penatibus nunc dui adipiscing convallis bulum parturient suspendisse.
- Abitur parturient praesent lectus quam a natoque adipiscing a vestibulum hendre.
- Diam parturient dictumst parturient scelerisque nibh lectus.
Scelerisque adipiscing bibendum sem vestibulum et in a a a purus lectus faucibus lobortis tincidunt purus lectus nisl class eros.Condimentum a et ullamcorper dictumst mus et tristique elementum nam inceptos hac parturient scelerisqueĀ vestibulum amet elit ut volutpat.
Related products
2SK1317 MOSFET – 1500V 2.5A N-Channel Power MOSFET TO-3P Package
₹410.00
2SK1317 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications
2SK2611 MOSFET – 900V 9A N-Channel Power MOSFET TO-3PN Package
₹102.00
K2611S N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
2SK2968 MOSFET – 900V 10A N-Channel Power MOSFET TO-3PN Package
₹120.00
2SK2968 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
2SK3550 MOSFET – 900V 10A N-Channel Power MOSFET TO-3PF Packag
₹390.00
2SK3550?is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
BS107 MOSFET – 200V 250mA N-Channel Small Signal Mosfet TO-92 Package
₹27.50
BS107 N-Channel Mosfet is a type of field-effect transistor (FET) It has an insulated gate whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor or MISFET is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect-transistor.
Used for Power Supplies, Switching applications.
IRF1010 MOSFET – 60V 84A N-Channel HEXFET Power MOSFET TO-220 Package
₹50.00
IRF1010 Advanced HEXFET? Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF2807 MOSFET – 75V 82A N-Channel HEXFET Power MOSFET TO-220 Package
₹55.00
IRF2807 is Advanced HEXFET? Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF3415 MOSFET – 150V 43A N-Channel HEXFET Power MOSFET TO-220 Package
₹78.00
IRF3415 is fifth generation HEXFET? Power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Reviews
There are no reviews yet.