Click to enlarge
DS1232 MicroMonitor Chip
DS1232 MicroMonitor Chip ₹40.00
Back to products
DS1307 IC - Real Time Clock (RTC) IC ₹33.00

DS12C887 IC – Real Time Clock (RTC) IC

₹213.00

RTC DS 12C887 is widely used to provide exact time and date in many applications such as x86 IBM PC. This RTC provides time components hour, minute and second in addition to the date/calendar components of year, month and day. This chip uses an internal lithium battery, which keeps the time and date updated even when the power is off. The DS12C887 works on CMOS technology to keep the power consumption low. It has a total of 128 bytes of non volatile RAM. It uses 14 bytes of RAM for storing the values of clock/calendar and control registers. The rest 114 bytes of RAM are for general purpose data storage.

The internal registers are accessible only when the RTC is powered by an external power source. When the external power is turned off, the RTC clock keeps running from the internal lithium battery source but the internal registers of the RTC cannot be accessed. RTC 12C887 becomes active when a voltage greater than 4.25V is applied and the internal registers can be accessed after 200 msec.

1000 in stock (can be backordered)

Compare
Add to wishlist
SKU: CMTRTC-0002 Category:
Reviews (0)

Reviews

There are no reviews yet.

Be the first to review “DS12C887 IC – Real Time Clock (RTC) IC”

Your email address will not be published. Required fields are marked *

Shipping & Delivery

MAECENAS IACULIS

Vestibulum curae torquent diam diam commodo parturient penatibus nunc dui adipiscing convallis bulum parturient suspendisse parturient a.Parturient in parturient scelerisque nibh lectus quam a natoque adipiscing a vestibulum hendrerit et pharetra fames nunc natoque dui.

ADIPISCING CONVALLIS BULUM

  • Vestibulum penatibus nunc dui adipiscing convallis bulum parturient suspendisse.
  • Abitur parturient praesent lectus quam a natoque adipiscing a vestibulum hendre.
  • Diam parturient dictumst parturient scelerisque nibh lectus.

Scelerisque adipiscing bibendum sem vestibulum et in a a a purus lectus faucibus lobortis tincidunt purus lectus nisl class eros.Condimentum a et ullamcorper dictumst mus et tristique elementum nam inceptos hac parturient scelerisque vestibulum amet elit ut volutpat.

Related products

Compare

DS1225AD-150+

₹1,400.00
The DS1225AB and DS1225AD are 65,536-bit nonvolatile SRAMs that are structured as 8192 words by 8 bits. Each NV SRAM contains its own lithium energy source as well as control circuitry that constantly monitors VCC for out-of-tolerance conditions. When this occurs, the lithium energy source is automatically activated, and write protection is enabled permanently to avoid data corruption. The NV SRAMs can be used in place of conventional 8k ? 8 SRAMs that are directly compatible with the common byte wide 28-pin DIP standard. The devices also have the same pinout as the 2764 EPROM and 2864 EEPROM, allowing for direct replacement while improving performance. The amount of write cycles that can be performed is not limited, and no extra assistance circuitry is required for microprocessor connection.
Add to wishlist
Add to cart
Quick view
Compare

DS1225AD-170+

₹1,500.00
The DS1225AB and DS1225AD are 65,536-bit nonvolatile SRAMs that are structured as 8192 words by 8 bits. Each NV SRAM contains its own lithium energy source as well as control circuitry that constantly monitors VCC for out-of-tolerance conditions. When this occurs, the lithium energy source is automatically activated, and write protection is enabled permanently to avoid data corruption. The NV SRAMs can be used in place of conventional 8k ? 8 SRAMs that are directly compatible with the common byte wide 28-pin DIP standard. The devices also have the same pinout as the 2764 EPROM and 2864 EEPROM, allowing for direct replacement while improving performance. The amount of write cycles that can be performed is not limited, and no extra assistance circuitry is required for microprocessor connection.
Add to wishlist
Add to cart
Quick view
Compare

DS1225AD-70+

₹1,300.00
The DS1225AB and DS1225AD are 65,536-bit nonvolatile SRAMs that are structured as 8192 words by 8 bits. Each NV SRAM contains its own lithium energy source as well as control circuitry that constantly monitors VCC for out-of-tolerance conditions. When this occurs, the lithium energy source is automatically activated, and write protection is enabled permanently to avoid data corruption. The NV SRAMs can be used in place of conventional 8k ? 8 SRAMs that are directly compatible with the common byte wide 28-pin DIP standard. The devices also have the same pinout as the 2764 EPROM and 2864 EEPROM, allowing for direct replacement while improving performance. The amount of write cycles that can be performed is not limited, and no extra assistance circuitry is required for microprocessor connection.
Add to wishlist
Add to cart
Quick view
Compare

DS1225AD-85+

₹1,300.00
The DS1225AB and DS1225AD are 65,536-bit nonvolatile SRAMs that are structured as 8192 words by 8 bits. Each NV SRAM contains its own lithium energy source as well as control circuitry that constantly monitors VCC for out-of-tolerance conditions. When this occurs, the lithium energy source is automatically activated, and write protection is enabled permanently to avoid data corruption. The NV SRAMs can be used in place of conventional 8k ? 8 SRAMs that are directly compatible with the common byte wide 28-pin DIP standard. The devices also have the same pinout as the 2764 EPROM and 2864 EEPROM, allowing for direct replacement while improving performance. The amount of write cycles that can be performed is not limited, and no extra assistance circuitry is required for microprocessor connection.
Add to wishlist
Add to cart
Quick view
Compare

DS1230Y-100+

₹1,500.00
The DS1230 256k Nonvolatile SRAMs have a capacity of 262,144 bits and are structured as 32,768 words by 8 bits. Each NV SRAM contains a self-contained lithium energy source and control circuitry that constantly monitors VCC for out-of-tolerance conditions. When such a circumstance happens, the lithium energy source is automatically activated, and write protection is engaged unconditionally to prevent data corruption. DIP-package DS1230 devices can be utilized in place of current 32k ? 8 static RAMs that directly comply to the common byte wide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing for direct substitution while improving performance. The Low Profile Module package of DS1230 devices is specifically suited for surface-mount applications. The amount of write cycles that can be performed is not limited, and no extra assistance circuitry is required for microprocessor connection.
Add to wishlist
Add to cart
Quick view
Compare

DS1230Y-120+

₹1,500.00
The DS1230 256k Nonvolatile SRAMs have a capacity of 262,144 bits and are structured as 32,768 words by 8 bits. Each NV SRAM contains its own lithium energy source as well as control circuitry that constantly monitors VCC for out-of-tolerance conditions. When this occurs, the lithium energy source is automatically activated, and write protection is enabled unconditionally to avoid data corruption. The DS1230 DIP-package devices can be utilized in place of current 32k ? 8 static RAMs that directly comply to the common byte wide 28-pin DIP standard. The pinout of the DIP devices matches that of the 28256 EEPROMs, allowing for straightforward substitution while improving performance. The Low Profile Module package of DS1230 devices is specifically suited for surface-mount applications. The number of write cycles that can be performed is not limited, and no extra assistance circuitry is required for microprocessor connection.
Add to wishlist
Add to cart
Quick view
Compare

DS1230Y-200+

₹2,000.00
The DS1230 256k Nonvolatile SRAMs have a capacity of 262,144 bits and are structured as 32,768 words by 8 bits. Each NV SRAM contains its own lithium energy source as well as control circuitry that constantly monitors VCC for out-of-tolerance conditions. When this occurs, the lithium energy source is automatically activated, and write protection is enabled unconditionally to avoid data corruption. The DS1230 DIP-package devices can be utilized in place of current 32k ? 8 static RAMs that directly comply to the common byte wide 28-pin DIP standard. The pinout of the DIP devices matches that of the 28256 EEPROMs, allowing for straightforward substitution while improving performance. The DS1230 devices in the Low Profile Module package are developed primarily for surface-mount applications. The amount of write cycles that can be performed is not limited, and no extra assistance circuitry is required for microprocessor connection.
Add to wishlist
Add to cart
Quick view
Compare

DS1230Y-70+

₹1,900.00
The DS1230 256k Nonvolatile SRAMs have a capacity of 262,144 bits and are structured as 32,768 words by 8 bits. Each NV SRAM contains its own lithium energy source as well as control circuitry that constantly monitors VCC for out-of-tolerance conditions. When this occurs, the lithium energy source is automatically activated, and write protection is enabled unconditionally to avoid data corruption. The DS1230 DIP-package devices can be utilized in place of current 32k ? 8 static RAMs that directly comply to the common byte wide 28-pin DIP standard. The pinout of the DIP devices matches that of the 28256 EEPROMs, allowing for straightforward substitution while improving performance. The Low Profile Module package of DS1230 devices is specifically suited for surface-mount applications. There is no limit to the number of write cycles that can be performed.
Add to wishlist
Add to cart
Quick view