The FAN7392 is a rnonolithic high- and low-sde gate drive IC that can drive high-speed MOSFETs and IGBTs that operate up to +600V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross-conduction. Fairch- ild’s high-voltage process and cornnwl-rnode noise can- celing techniques provide stable operation of the high- side driver under high dv/dt noise circumstances. An *Ivanced level-shift circuit offers high-side gate driver operation up to Vs=-9.8V (typical) for VBS=15V. Logic inputs are compatible with standard CMOS or LSTTL output. down to 3.3V logic The I-JVLO circuit prevents malfunction when VCC and VBS are lower than the speci- fied threshold voltage. The high-current and low-output vol* drop feature makes this device suitable for half- and full-bridge inverters, like power Sup- r DC-DC converter applications.
Features:-
Floating Channel for Bootstrap Operation to +600V
3AJ3A Sourcing/Sinking Current Driving Capability
Common-Mode dv/dt Noise Canceling Circuit
3.3V Logic Compatible Separate Logic Supply (VDD) Range from 3.3V to 20V
Under-Voltage Lockout for vcc and VBS Cycle-by-Cycle Edge-Triggered Shutdown Logic
Matched Propagation Delay for Both Channels
Outputs In-phase with Input Signals
Available in 14-DIP and 16-SOP (Wide) Packages
Specifications:-
Parameters Min Max Unit
High-Side Floating Supply Voltage-VB -0.3 625 V
High-Side Floating Offset Voltage-VS VB-25.0 VB+0.3 V
High-Side Floating Output VoltageVHO VS-0.3 VB+0.3 V
Low-Side Supply Voltage-VCC -0.3 25 V
Low-Side Floating Output Voltage-VLO -0.3 VCC+0.3 V
Logic Supply Voltage-VDD -0.3 VSS+25.0 V
Logic Supply Offset Voltage-VSS VCC-25.0 VCC+0.3 V
Logic Input Voltage (HIN, LIN and SD)VIN VSS-0.3 VDD+0.3 V
Related Document:-
FAN7392 IC Datasheet
* Product Images are shown for illustrative purposes only and may differ from actual product.
FAN7392 High and Low-Side Gate-Drive IC DIP-14 Package
₹120.00
The FAN7392 is a rnonolithic high- and low-sde gate drive IC that can drive high-speed MOSFETs and IGBTs that operate up to +600V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross-conduction.
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Parameter | Min | Max | Unit |
Ambient Temperature under Bias TBIAS | -55 | 125 | ?C |
Storage Temperature TSTG | -65 | 150 | ?C |
Voltage on VDD with respect to GND VDD | -0.3 | 4.2 | V |
Maximum Total Current through VDD and GND | - | 500 | mA |
Maximum Output Current sunk by RST or any I/O pin | - | 100 | mA |