IRFP2907
₹460.00
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175?C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lea
This Stripe Planar design of HEXFET? Power MOSFETs
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175?C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in a wide variety of applications.
248 in stock (can be backordered)
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