Features
ā¢ Low Reverse Current
ā¢ Low Stored Charge, Majority Carrier Conduction
ā¢ Low Power Loss/High Efficiency
ā¢ Highly Stable Oxide Passivated Junction
ā¢ GuardāRing for Stress Protection
ā¢ Low Forward Voltage
ā¢ 175Ā°C Operating Junction Temperature
ā¢ High Surge Capacity
ā¢ These Devices are PbāFree and are RoHS Compliant
MBR1100 (PACK OF 10)
₹100.00
DESCRIPTION: These rectifiers employ the Schottky Barrier principle in a large area
metalātoāsilicon power diode. Stateāofātheāart geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in lowāvoltage,
highāfrequency inverters, free wheeling diodes, and polarity
protection diodes.
MAECENAS IACULIS
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ADIPISCING CONVALLIS BULUM
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