STGW19NC60HD IGBT – 600V 19A Very Fast IGBT with Ultrafast Diode

FSBB20CH60 is a Motion SPM^??3 series that ON Semiconductor has developed to provide a very compact and high performance inverter solution for AC motor drives in low-power applications such as air conditioners. It combines optimized circuit protections and drives matched to low-loss IGBTs. The system reliability is further enhanced by the integrated under-voltage lock-out and over-current protection. The high speed built-in HVIC provides optocoupler- less single-supply IGBT gate driving capability that further reduces the overall size of the inverter system. Each phase leg current of the inverter can be monitored thanks to three separate negative dc terminals.

The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.