Product Description – STP55NF06
STP55NF06 power MOSFETs have been developed using STMicroelectronics’ unique “Single Feature Size” strip-based process, which is specifically designed to minimize input capacitance and gate charge. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics that make it suitable for use as a primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, also for applications where low gate driving charge is required.
Features:- STP55NF06
- 100% avalanche tested
- ?Application-oriented characterization
- ?Switching application
- Number of Channels: 1
- Transistor Polarity: N -Channel
- Drain-Source Breakdown Voltage (Vds): 60V
- Continuous Drain Current (Id):50A
- Operating Temperature Range: -55 – 150?C
- High Current, High Switching Speed
- Motor Control
- Audio Amplifier
- DC-DC & DC-AC Converters
- Automotive
- Switching application
- Industrial
- Communications & Networking
- Computers & Computer Peripherals
Specification -: STP55NF06
Model | STP55NF06 |
Brand | STMicroelectronics |
Drain-Source Voltage | 60V DC |
Drain-Gate Voltage | 60V DC |
Gate-Source Voltage | ?20V DC |
Drain Current | 50A @ 25?C, 35A @100?C |
Mounting | Through Hole |
Package | TO-220 |
Pulsed Drain Current | 200A |
Power Dissipation | 30W |
Single Pulse Avalanche Energy | 350mJ |
Operating Temperature | -55?C to 175?C |
Quantity | 50 Pieces |
Package Includes: STP55NF06
1 x P55NF06 – 55NF06 (STP55NF06) MOSFET N-Channel Power MOSFET TO-220 Package – 60V 50A
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