IRF2807 MOSFET – 75V 82A N-Channel HEXFET Power MOSFET TO-220 Package
IRF2807 is Advanced HEXFET? Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF3205 MOSFET – 55V 110A N-Channel HEXFET Power MOSFET TO-220 Package
IRF3205 is Advanced HEXFET? Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF3205 MOSFET – 55V 110A N-Channel HEXFET Power MOSFET TO-220 Package
20N60 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
IRF3415 MOSFET – 150V 43A N-Channel HEXFET Power MOSFET TO-220 Package
IRF3415 is fifth generation HEXFET? Power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF3710 MOSFET – 100V 57A N-Channel HEXFET Power MOSFET TO-220 Package
IRF3710 is Advanced HEXFET? Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
