IRF510 MOSFET – 100V 5.6A N-Channel Power MOSFET TO-220 Package
IRF510 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
IRF530
IRF530 MOSFET – 100V 17A N-Channel Power MOSFET TO-220 Package
IRF530 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
IRF5305 MOSFET – 55V 31A P-Channel HEXFET Power MOSFET TO-220 Package
IRF5305 fifth generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF540 MOSFET – 100V 33A N-Channel HEXFET Power MOSFET TO-220 Package
IRF540 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
IRF610 MOSFET – 200V 3.3A N-Channel Power MOSFET TO-220 Package
IRF610 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
