IRF820 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

N-Channel 500 V 8A (Tc) 134W (Tc) Through Hole TO-220-3

Best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.