BSC030N08NS5 MOSFET N-Ch 80V 100A
Original price was: ₹203.00.₹194.00Current price is: ₹194.00.
BSC030P03NS3G 30V 25.4A TDSON-8
₹285.00
Description
“Optimized for 5V driver applications (Notebook, VGA, POL) with low FOMSW for high-frequency SMPS. Features include 100% avalanche testing, N-channel design with very low R_DS(on) @ V_GS=4.5V, excellent FOM, JEDEC qualification, superior thermal resistance, and halogen-free, Pb-free, RoHS-compliant plating per IEC61249-2-21.”
Reviews (0)
Shipping & Delivery
MAECENAS IACULIS
Vestibulum curae torquent diam diam commodo parturient penatibus nunc dui adipiscing convallis bulum parturient suspendisse parturient a.Parturient in parturient scelerisque nibh lectus quam a natoque adipiscing a vestibulum hendrerit et pharetra fames nunc natoque dui.
ADIPISCING CONVALLIS BULUM
- Vestibulum penatibus nunc dui adipiscing convallis bulum parturient suspendisse.
- Abitur parturient praesent lectus quam a natoque adipiscing a vestibulum hendre.
- Diam parturient dictumst parturient scelerisque nibh lectus.
Scelerisque adipiscing bibendum sem vestibulum et in a a a purus lectus faucibus lobortis tincidunt purus lectus nisl class eros.Condimentum a et ullamcorper dictumst mus et tristique elementum nam inceptos hac parturient scelerisque vestibulum amet elit ut volutpat.
Related products
2SK1118 MOSFET – 600V 6A N-Channel Power MOSFET TO-220F Package
2SK1118 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
2SK1317 MOSFET – 1500V 2.5A N-Channel Power MOSFET TO-3P Package
2SK1317 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications
2SK2611 MOSFET – 900V 9A N-Channel Power MOSFET TO-3PN Package
K2611S N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
2SK3878 MOSFET – 900V 9A N-Channel Power MOSFET TO-3P Package
2SK3878 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
FDP090N10 MOSFET – 100V 75A N-Channel Power Trench MOSFET TO-220 Package
FDP090N10 N-Channel MOSFET is produced using ?advanced PowerTrench? process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
IRF1010 MOSFET – 60V 84A N-Channel HEXFET Power MOSFET TO-220 Package
IRF1010 Advanced HEXFET? Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF1404 MOSFET – 40V 202A N-Channel HEXFET Power MOSFET TO-220 Package
IRF1404 Seventh Generation HEXFET? Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications including automotive.
Reviews
There are no reviews yet.