H11F1 OPTOCOUPLER 6 PIN
₹110.00
The H11F consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo detector.
250 in stock (can be backordered)
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CNY74-2 CHANNEL OPTOCOUPLER
The CNY74-2 consist of a photo transistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-lead, resp. 16-lead plastic dual inline package. The elements are mounted on one lead frame using a co planar technique, providing a fixed distance between input and output for highest safety requirements.
PC817X3NIP1B
PC817XxNSZ1B Series contains an IRED optically
coupled to a phototransistor.
It is packaged in a 4-pin DIP.
Input-output isolation voltage(rms) is 5kV.
Collector-emitter voltage is 80V.
CTR is 50% to 400% (at IF=5mA,VCE=5V,Ta=25?)
? Features
1.4-pin DIP package
2. Double transfer mold package
(Ideal for Flow Soldering)
3. High isolation voltage between input and output
(Viso (rms) :5kV)
4. High collector-emitter voltage(VCEO :80V)
5. Current transfer ratio
(CTR : MIN. 50% at IF=5 mA, VCE=5V ,Ta=25?)
6. RoHS directive compliant
TLP250H
1. Applications
? Industrial Inverters
? Air Conditioner Inverters
? IGBT Gate Drivers
? MOSFET Gate Drivers
? Induction Cooktop and Home Appliances
2. General
The TLP250H is a photocoupler in a DIP8 package that consists of a GaA?As infrared light-emitting diode (LED) optically coupled to an integrated high-gain, high-speed photodetector IC chip. It provides guaranteed performanceand specifications at temperatures up to 125.?The TLP250H has an internal Faraday shield that provides a
guaranteed Common-mode transient immunity of ?40 kV/?s. It has a totem-pole output that can both sink and source current. The TLP250H is ideal for IGBT and power MOSFET gate drive.
3. Features
(1) Buffer logic type (totem pole output)
(2) Output peak current:?2.5 A (max)
(3) Operating temperature: -40 to 125
(4) Supply current: 3 mA (max)
(5) Supply voltage: 10 to 30 V
(6) Threshold input current: 5 mA (max)
(7) Propagation delay time: 500 ns (max)
(8) Common-mode transient immunity:?40 kV/?s (min)
(9) Isolation voltage: 3750 Vrms (min)
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