IRFZ46N

93.00

 Advanced Process Technology
 Ultra Low On-Resistance
 Dynamic dv/dt Rating
 175?C Operating Temperature
 Fast Switching
 Fully Avalanche Rated
 Lead-Free

Advanced HEXFET? Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry

158 in stock (can be backordered)

SKU: CMMo-0202 Category:
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