IR2153 Self Oscillating Half Bridge Driver IC DIP-8 Package
IR2153PBF
The IR2153D(S) gate driver IC is an improved version of the popular IR2155 and IR2151 gate driver ICs, and it includes a high voltage half-bridge gate driver as well as a front end oscillator similar to the industry standard CMOS555 timer. The IR2153 has more functionality and is simpler to use than previous integrated circuits. The CT pin has a shutdown feature that allows both gate driver outputs to be disabled with a low voltage control signal. Furthermore, once the rising under voltage lockout threshold on VCC is reached, the gate driver output pulse widths are the same, resulting in a more stable frequency vs time profile at startup. Noise immunity has been significantly improved by lowering the gate drivers' peak di/dt and increasing the under voltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.
Features
?Integrated 600V half-bridge gate driver
?15.6V zener clamp on Vcc
?True micropower start up
?Tighter initial deadtime control
?Low temperature coefficient deadtime
?Shutdown feature (1/6th Vcc) on CTpin
?Increased under voltage lockout Hysteresis (1V)
Lower power level-shifting circuit
?Constant LO, HO pulse widths at startup
?Lower di/dt gate driver for better noise immunity
?Low side output in phase with RT
?Internal 50nsec (typ.) bootstrap diode (IR2153D)
?Excellent latch immunity on all inputs and outputs
?ESD protection on all leads
?Also available LEAD-FREE
IR21844S
The IR2184(4)(S) are high voltage,
high speed power MOSFET and IGBT
drivers with dependent high and low
side referenced output channels. Proprietary HVIC and latch immune
CMOS technologies enable ruggedized monolithic construction. The
logic input is compatible with standard
CMOS or LSTTL output, down to 3.3V
logic. The output drivers feature a
high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be
used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600
volts