Showing 1897–1908 of 3972 results

IRFD9220

203.00
? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? For Automatic Insertion ? End Stackable ? P-Channel ? Fast Switching ? Ease of Paralleling Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to th

IRFI644 MOSFET – 250V 7.9A N-Channel Power MOSFET TO-220 Full package

82.00
IRFI644 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

IRFI730

168.00
? Isolated package ? High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) ? Sink to lead creepage distance = 4.8 mm ? Dynamic dV/dt rating ? Low thermal resistance

IRFI840GLC

230.00
Ultra low gate charge ? Reduced gate drive requirement ? Enhanced 30 V VGS rating ? Isolated package ? High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) ? Sink to lead creepage distance = 4.8 mm ? Repetitive avalanche rated

IRFIBE30G

217.00
? Isolated package ? High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) ? Sink to lead creepage distance = 4.8 mm ? Dynamic dV/dt rating ? Low thermal resistance

IRFP044N MOSFET – 55V 53A N-Channel HEXFET Power MOSFET TO-247 Package

160.00
IRFP044N is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficienc

IRFP054N

211.00
ADVANCE PROCESS TECHNOLOGY DYNAMIV dv/dt RATING 175 DEGREE CELCIUS OPERATING TEMPERATURE FAST SWITCHING FULLY AVALANCHE RATED

IRFP054N MOSFET – 55V 81A N-Channel HEXFET Power MOSFET TO-247 Package

95.00
IRFP054N is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

IRFP064N

368.00
? Dynamic dV/dt Rating ? Repetitive Avalanche Rated ? Ultra Low On- Resistance ? Very Low Thermal Resistance ? Isolated Central Mounting Hole ? 175 ?C Operating Temperature ? Fast Switching ? Compliant to RoHS Directive 2002/95/EC Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

IRFP140N

162.00
Advanced processed technology Dynamic dv/dt Rating 175 degree celcius operating temperature Fast switching Fully avalanche rated